Direct evidence of recrystallization rate enhancement during Rapid Thermal Annealing of phosphorus amorphized silicon layers

W.O. Adekoya; M. Hage-Ali; J.C. Muller; P. Siffert

Journal articles

Direct evidence of recrystallization rate enhancement during Rapid Thermal Annealing of phosphorus amorphized silicon layers

W.O. Adekoya M. Hage-Ali ¹ J.C. Muller P. Siffert ¹

1 IReS - Institut de Recherches Subatomiques

Document type :

Journal articles

Complete list of metadata

http://hal.in2p3.fr/in2p3-00017592
Contributor : Yvette Heyd Connect in order to contact the contributor
Submitted on : Thursday, September 28, 2000 - 9:05:23 AM
Last modification on : Thursday, April 23, 2020 - 2:26:19 PM

Direct evidence of recrystallization rate enhancement during Rapid Thermal Annealing of phosphorus amorphized silicon layers

Identifiers

Collections

Citation

Export

Metrics

217

Direct evidence of recrystallization rate enhancement during Rapid Thermal Annealing of phosphorus amorphized silicon layers

Identifiers

Collections

Citation

Export

Share

Metrics

217