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Direct evidence of recrystallization rate enhancement during Rapid Thermal Annealing of phosphorus amorphized silicon layers

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http://hal.in2p3.fr/in2p3-00017592
Contributor : Yvette Heyd Connect in order to contact the contributor
Submitted on : Thursday, September 28, 2000 - 9:05:23 AM
Last modification on : Thursday, April 23, 2020 - 2:26:19 PM

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W.O. Adekoya, M. Hage-Ali, J.C. Muller, P. Siffert. Direct evidence of recrystallization rate enhancement during Rapid Thermal Annealing of phosphorus amorphized silicon layers. Applied Physics Letters, American Institute of Physics, 1987, 50, pp.1736. ⟨in2p3-00017592⟩

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