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Oxygen behaviour during titanium silicide formation by rapid thermal annealing

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http://hal.in2p3.fr/in2p3-00017601
Contributor : Yvette Heyd Connect in order to contact the contributor
Submitted on : Thursday, September 28, 2000 - 10:07:45 AM
Last modification on : Thursday, April 23, 2020 - 2:26:19 PM

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  • HAL Id : in2p3-00017601, version 1

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R. Pantel, D. Levy, D. Nicolas, J.P. Ponpon. Oxygen behaviour during titanium silicide formation by rapid thermal annealing. Journal of Applied Physics, American Institute of Physics, 1987, 62, pp.4319. ⟨in2p3-00017601⟩

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