Skip to Main content Skip to Navigation
Journal articles

Behaviour of implanted arsenic during rapid thermal annealing of Ti on Si

J.P. Ponpon 1 A. Saulnier R. Stuck 1
1 IReS - Institut de Recherches Subatomiques
Document type :
Journal articles
Complete list of metadata
http://hal.in2p3.fr/in2p3-00017603
Contributor : Yvette Heyd <>
Submitted on : Thursday, September 28, 2000 - 10:21:04 AM
Last modification on : Thursday, April 23, 2020 - 2:26:19 PM

Identifiers

  • HAL Id : in2p3-00017603, version 1

Collections

CNRS | CGE | IN2P3 | SITE-ALSACE

Citation

J.P. Ponpon, A. Saulnier, R. Stuck. Behaviour of implanted arsenic during rapid thermal annealing of Ti on Si. Applied physics. A, Materials science & processing, Springer Verlag, 1987, 44, pp.227. ⟨in2p3-00017603⟩

Export

BibTeX TEI DC DCterms EndNote

Share

Metrics

Record views

193