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Behaviour of implanted arsenic during rapid thermal annealing of Ti on Si

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http://hal.in2p3.fr/in2p3-00017603
Contributor : Yvette Heyd <>
Submitted on : Thursday, September 28, 2000 - 10:21:04 AM
Last modification on : Thursday, April 23, 2020 - 2:26:19 PM

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  • HAL Id : in2p3-00017603, version 1

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J.P. Ponpon, A. Saulnier, R. Stuck. Behaviour of implanted arsenic during rapid thermal annealing of Ti on Si. Applied physics. A, Materials science & processing, Springer Verlag, 1987, 44, pp.227. ⟨in2p3-00017603⟩

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