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Interaction between arsenic hydrogen and silicon matrix in doping of sputtered amorphous hydrogenated silicon

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http://hal.in2p3.fr/in2p3-00017881
Contributor : Yvette Heyd <>
Submitted on : Monday, October 23, 2000 - 7:44:07 AM
Last modification on : Wednesday, February 17, 2021 - 11:50:23 AM

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  • HAL Id : in2p3-00017881, version 1

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M. Toulemonde, P. Siffert, A. Deneuville, J.C. Bruyere. Interaction between arsenic hydrogen and silicon matrix in doping of sputtered amorphous hydrogenated silicon. Applied Physics Letters, American Institute of Physics, 1981, 39, pp.152-154. ⟨in2p3-00017881⟩

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