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Journal articles

Compound semiconductors surface characterization by high resolution Rutherford backscattering

M. Hage-Ali 1, 2 P. Siffert 1
1 IReS - Institut de Recherches Subatomiques
2 IPNO - Institut de Physique Nucléaire d'Orsay
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Journal articles
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http://hal.in2p3.fr/in2p3-00017970
Contributor : Yvette Heyd Connect in order to contact the contributor
Submitted on : Friday, November 3, 2000 - 8:13:20 AM
Last modification on : Wednesday, September 16, 2020 - 4:06:44 PM

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  • HAL Id : in2p3-00017970, version 1

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IPNO | CNRS | CGE | IN2P3 | SITE-ALSACE

Citation

M. Hage-Ali, P. Siffert. Compound semiconductors surface characterization by high resolution Rutherford backscattering. Nuclear Instruments and Methods, Elsevier, 1979, 166, pp.411-418. ⟨in2p3-00017970⟩

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