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Thermally stimulated current measurements on silicon junctions produced by implantation of low energy boron ions

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http://hal.in2p3.fr/in2p3-00018451
Contributor : Yvette Heyd Connect in order to contact the contributor
Submitted on : Thursday, December 21, 2000 - 8:48:05 AM
Last modification on : Thursday, April 23, 2020 - 2:26:20 PM

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J.C. Muller, R. Stuck, R. Berger, P. Siffert. Thermally stimulated current measurements on silicon junctions produced by implantation of low energy boron ions. Solid-State Electronics, Elsevier, 1974, 17, pp.1293-1297. ⟨in2p3-00018451⟩

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