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Low energy boron implantation profiles in silicon from junction depth measurements

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http://hal.in2p3.fr/in2p3-00018479
Contributor : Yvette Heyd <>
Submitted on : Friday, December 22, 2000 - 9:45:54 AM
Last modification on : Thursday, April 23, 2020 - 2:26:20 PM

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  • HAL Id : in2p3-00018479, version 1

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P. Sebillotte, M. Badanoiu, V.B. Ndocko-Ndongue, P. Siffert. Low energy boron implantation profiles in silicon from junction depth measurements. Radiation Effects, 1971, 7, pp.7-15. ⟨in2p3-00018479⟩

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