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Study of defects in silicon after low energy h+ implantation by dlts measurements

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http://hal.in2p3.fr/in2p3-00019296
Contributor : Yvette Heyd Connect in order to contact the contributor
Submitted on : Thursday, April 26, 2001 - 2:06:19 PM
Last modification on : Thursday, April 23, 2020 - 2:26:20 PM

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  • HAL Id : in2p3-00019296, version 1

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J. Krynicki, J.C. Muller, P. Siffert, I. Brylowska, K. Paprocki. Study of defects in silicon after low energy h+ implantation by dlts measurements. physica status solidi (a), Wiley, 1987, 100, pp.245-249. ⟨in2p3-00019296⟩

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