Skip to Main content Skip to Navigation
Conference papers

Effects of conventional and rapid thermal annealing on minority carrier diffusion length in float zone and Czochralsi silicon crystals

Document type :
Conference papers
Complete list of metadata

http://hal.in2p3.fr/in2p3-00019442
Contributor : Yvette Heyd Connect in order to contact the contributor
Submitted on : Wednesday, May 30, 2001 - 10:03:43 AM
Last modification on : Thursday, April 23, 2020 - 2:26:20 PM

Identifiers

  • HAL Id : in2p3-00019442, version 1

Collections

Citation

A. Barhdadi, H. Amzil, N. M'Gafad, T. Biaz, W. Eichhammer, et al.. Effects of conventional and rapid thermal annealing on minority carrier diffusion length in float zone and Czochralsi silicon crystals. Moroccan Solid State Chemistry Meeting, Oct 1991, Casablanca, Morocco. pp.221-224. ⟨in2p3-00019442⟩

Share

Metrics

Record views

63