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The use of rapid thermal annealing for studying contamination in silicon

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http://hal.in2p3.fr/in2p3-00019444
Contributor : Yvette Heyd <>
Submitted on : Wednesday, May 30, 2001 - 10:37:16 AM
Last modification on : Thursday, April 23, 2020 - 2:26:20 PM

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  • HAL Id : in2p3-00019444, version 1

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B. Hartiti, A. Slaoui, J.C. Muller, P. Siffert. The use of rapid thermal annealing for studying contamination in silicon. Materials Science and Engineering, Elsevier, 1991, B10, pp.L11-L14. ⟨in2p3-00019444⟩

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