 |
 |
 |
|
|
|
| HAL : in2p3-00019447, version 1 |
| Fiche détaillée |  Récupérer au format |
|
|
| Applied Surface Science 46 (1990) 371-374 |
|
|
|
|
| Annealing kinetics during rapid thermal processing of excimer laser-induced defects in virgin silicon |
|
|
| B. Hartiti1A. Slaoui1J.C. Muller1P. Siffert1 |
|
|
| (1990) |
|
|
|
|
|
|
|
|
|
|
|
| 1 : | IReS - Institut de Recherches Subatomiques |
|
|
|
|
|
|
|
|
|
| in2p3-00019447, version 1 | |
| http://hal.in2p3.fr/in2p3-00019447 | |
| oai:hal.in2p3.fr:in2p3-00019447 | |
| Contributeur : Yvette Heyd | |
| Soumis le : Mercredi 30 Mai 2001, 11:05:37 | |
| Dernière modification le : Mercredi 30 Mai 2001, 11:05:37 | |
