Annealing kinetics during rapid thermal processing of excimer laser-induced defects in virgin silicon

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Submitted on : Wednesday, May 30, 2001 - 11:00:05 AM
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  • HAL Id : in2p3-00019447, version 1

Citation

B. Hartiti, A. Slaoui, J.C. Muller, P. Siffert. Annealing kinetics during rapid thermal processing of excimer laser-induced defects in virgin silicon. Applied Surface Science, Elsevier, 1990, 46, pp.371-374. <in2p3-00019447>

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