http://hal.in2p3.fr/in2p3-00019447 Contributor : Yvette HeydConnect in order to contact the contributor Submitted on : Wednesday, May 30, 2001 - 11:05:37 AM Last modification on : Thursday, April 23, 2020 - 2:26:20 PM
B. Hartiti, A. Slaoui, J.C. Muller, P. Siffert. Annealing kinetics during rapid thermal processing of excimer laser-induced defects in virgin silicon. Applied Surface Science, Elsevier, 1990, 46, pp.371-374. ⟨in2p3-00019447⟩