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Annealing kinetics during rapid thermal processing of excimer laser-induced defects in virgin silicon

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http://hal.in2p3.fr/in2p3-00019447
Contributor : Yvette Heyd Connect in order to contact the contributor
Submitted on : Wednesday, May 30, 2001 - 11:05:37 AM
Last modification on : Thursday, April 23, 2020 - 2:26:20 PM

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  • HAL Id : in2p3-00019447, version 1

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B. Hartiti, A. Slaoui, J.C. Muller, P. Siffert. Annealing kinetics during rapid thermal processing of excimer laser-induced defects in virgin silicon. Applied Surface Science, Elsevier, 1990, 46, pp.371-374. ⟨in2p3-00019447⟩

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