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On the origin of rapid thermal process induced recombination centers in silicon

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http://hal.in2p3.fr/in2p3-00019449
Contributor : Yvette Heyd Connect in order to contact the contributor
Submitted on : Wednesday, May 30, 2001 - 11:24:13 AM
Last modification on : Thursday, April 23, 2020 - 2:26:20 PM

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  • HAL Id : in2p3-00019449, version 1

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W. Eichhammmer, V.-T. Quat, P. Siffert. On the origin of rapid thermal process induced recombination centers in silicon. Journal of Applied Physics, American Institute of Physics, 1989, 66, pp.3857-3865. ⟨in2p3-00019449⟩

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