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Thermal annealing effects on grain boundary recombination activity in silicon

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http://hal.in2p3.fr/in2p3-00019451
Contributor : Yvette Heyd Connect in order to contact the contributor
Submitted on : Wednesday, May 30, 2001 - 1:36:28 PM
Last modification on : Thursday, April 23, 2020 - 2:26:20 PM

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  • HAL Id : in2p3-00019451, version 1

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A. Barhdadi, H. Amzil, J.C. Muller, P. Siffert. Thermal annealing effects on grain boundary recombination activity in silicon. Applied physics. A, Materials science & processing, Springer Verlag, 1989, 49, pp.233-237. ⟨in2p3-00019451⟩

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