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Inhomogeneous defect activation by rapid thermal processes in silicon

V. Thong-Quat 1 W. Eichhammer P. Siffert 1
1 IReS - Institut de Recherches Subatomiques
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http://hal.in2p3.fr/in2p3-00019454
Contributor : Yvette Heyd Connect in order to contact the contributor
Submitted on : Wednesday, May 30, 2001 - 1:55:39 PM
Last modification on : Thursday, April 23, 2020 - 2:26:20 PM

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  • HAL Id : in2p3-00019454, version 1

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V. Thong-Quat, W. Eichhammer, P. Siffert. Inhomogeneous defect activation by rapid thermal processes in silicon. Applied Physics Letters, American Institute of Physics, 1989, 54, pp.1235-1237. ⟨in2p3-00019454⟩

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