http://hal.in2p3.fr/in2p3-00019454 Contributor : Yvette HeydConnect in order to contact the contributor Submitted on : Wednesday, May 30, 2001 - 1:55:39 PM Last modification on : Thursday, April 23, 2020 - 2:26:20 PM
V. Thong-Quat, W. Eichhammer, P. Siffert. Inhomogeneous defect activation by rapid thermal processes in silicon. Applied Physics Letters, American Institute of Physics, 1989, 54, pp.1235-1237. ⟨in2p3-00019454⟩