Inhomogeneous defect activation by rapid thermal processes in silicon

V. Thong-Quat; W. Eichhammer; P. Siffert

Journal articles

Inhomogeneous defect activation by rapid thermal processes in silicon

V. Thong-Quat ¹ W. Eichhammer P. Siffert ¹

1 IReS - Institut de Recherches Subatomiques

Document type :

Journal articles

Domain :

Physics [physics] / Physics [physics] / Instrumentation and Detectors [physics.ins-det]

Complete list of metadata

http://hal.in2p3.fr/in2p3-00019454
Contributor : Yvette Heyd <>
Submitted on : Wednesday, May 30, 2001 - 1:55:39 PM
Last modification on : Thursday, April 23, 2020 - 2:26:20 PM

Inhomogeneous defect activation by rapid thermal processes in silicon

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Inhomogeneous defect activation by rapid thermal processes in silicon

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