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Electron properties of defects created by 1.6 GeV argon ions in silicon

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http://hal.in2p3.fr/in2p3-00019455
Contributor : Yvette Heyd Connect in order to contact the contributor
Submitted on : Wednesday, May 30, 2001 - 2:02:37 PM
Last modification on : Wednesday, February 17, 2021 - 11:50:23 AM

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  • HAL Id : in2p3-00019455, version 1

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J. Krynicki, M. Toulemonde, J.C. Muller, P. Siffert. Electron properties of defects created by 1.6 GeV argon ions in silicon. Materials Science and Engineering, Elsevier, 1989, B2, pp.105-110. ⟨in2p3-00019455⟩

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