Damage related deep electronic levels in silicon irradiated with 1.6 GeV Ar ions

Type de document :
Article dans une revue
Radiation Effects and Defects in Solids, Taylor & Francis, 1989, 110, pp.203-205


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Soumis le : mercredi 30 mai 2001 - 14:34:26
Dernière modification le : mercredi 30 mai 2001 - 14:34:26

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J. Krynicki, M. Toulemonde, J.C. Muller, P. Siffert. Damage related deep electronic levels in silicon irradiated with 1.6 GeV Ar ions. Radiation Effects and Defects in Solids, Taylor & Francis, 1989, 110, pp.203-205. <in2p3-00019456>

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