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in2p3-00019456, version 1
Damage related deep electronic levels in silicon irradiated with 1.6 GeV Ar ions
J. Krynicki
M. Toulemonde
J.C. Muller
1
P. Siffert
1
Details
1
IReS - Institut de Recherches Subatomiques
J. Krynicki
Author
M. Toulemonde
Author
J.C. Muller
1
Author
P. Siffert
1
Author
1
IReS - Institut de Recherches Subatomiques
(23 rue du Loess - BP 28 - 67037 Strasbourg Cedex 2 - France)
CNRS - Centre National de la Recherche Scientifique
: UMR7500
(France)
IN2P3
(France)
Cancéropôle du Grand Est
(France)
Université Louis Pasteur - Strasbourg I
(France)
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Journal articles
Radiation Effects and Defects in Solids
, Taylor & Francis, 1989, 110, pp.203-205
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http://hal.in2p3.fr/in2p3-00019456
Contributor :
Yvette Heyd
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Submitted on : Wednesday, May 30, 2001 - 2:34:26 PM
Last modification on : Wednesday, May 30, 2001 - 2:34:26 PM
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in2p3-00019456, version 1
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J. Krynicki, M. Toulemonde, J.C. Muller, P. Siffert. Damage related deep electronic levels in silicon irradiated with 1.6 GeV Ar ions.
Radiation Effects and Defects in Solids
, Taylor & Francis, 1989, 110, pp.203-205.
<in2p3-00019456>
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