http://hal.in2p3.fr/in2p3-00019456 Contributor : Yvette HeydConnect in order to contact the contributor Submitted on : Wednesday, May 30, 2001 - 2:34:26 PM Last modification on : Wednesday, February 17, 2021 - 11:50:22 AM
J. Krynicki, M. Toulemonde, J.C. Muller, P. Siffert. Damage related deep electronic levels in silicon irradiated with 1.6 GeV Ar ions. Radiation Effects and Defects in Solids, Taylor & Francis, 1989, 110, pp.203-205. ⟨in2p3-00019456⟩