Damage related deep electronic levels in silicon irradiated with 1.6 GeV Ar ions

docType_s : Journal articles


http://hal.in2p3.fr/in2p3-00019456
Contributor : Heyd Yvette <>
Submitted on : Wednesday, May 30, 2001 - 2:00:34 PM
Last modification on : Wednesday, May 30, 2001 - 2:00:34 PM

Identifiers

  • HAL Id : in2p3-00019456, version 1

Citation

J. Krynicki, M. Toulemonde, J.C. Muller, P. Siffert. Damage related deep electronic levels in silicon irradiated with 1.6 GeV Ar ions. Radiation Effects and Defects in Solids, Taylor & Francis: STM, Behavioural Science and Public Health Titles, 1989, 110, pp.203-205. <in2p3-00019456>

Export

Share