Skip to Main content Skip to Navigation
Journal articles

Damage related deep electronic levels in silicon irradiated with 1.6 GeV Ar ions

J. Krynicki M. Toulemonde J.C. Muller 1 P. Siffert 1
1 IReS - Institut de Recherches Subatomiques
Document type :
Journal articles
Complete list of metadata
http://hal.in2p3.fr/in2p3-00019456
Contributor : Yvette Heyd <>
Submitted on : Wednesday, May 30, 2001 - 2:34:26 PM
Last modification on : Wednesday, February 17, 2021 - 11:50:22 AM

Identifiers

  • HAL Id : in2p3-00019456, version 1

Collections

CNRS | CGE | IN2P3 | SITE-ALSACE | CIMAP | UNICAEN | ENSICAEN | COMUE-NORMANDIE | MADIR-CIMAP

Citation

J. Krynicki, M. Toulemonde, J.C. Muller, P. Siffert. Damage related deep electronic levels in silicon irradiated with 1.6 GeV Ar ions. Radiation Effects and Defects in Solids, Taylor & Francis, 1989, 110, pp.203-205. ⟨in2p3-00019456⟩

Export

BibTeX TEI DC DCterms EndNote

Share

Metrics

Record views

197