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Damage related deep electronic levels in silicon irradiated with 1.6 GeV Ar ions

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http://hal.in2p3.fr/in2p3-00019456
Contributor : Yvette Heyd Connect in order to contact the contributor
Submitted on : Wednesday, May 30, 2001 - 2:34:26 PM
Last modification on : Wednesday, February 17, 2021 - 11:50:22 AM

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  • HAL Id : in2p3-00019456, version 1

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J. Krynicki, M. Toulemonde, J.C. Muller, P. Siffert. Damage related deep electronic levels in silicon irradiated with 1.6 GeV Ar ions. Radiation Effects and Defects in Solids, Taylor & Francis, 1989, 110, pp.203-205. ⟨in2p3-00019456⟩

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