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| HAL : in2p3-00019456, version 1 |
| Fiche détaillée |  Récupérer au format |
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| Radiation Effects and Defects in Solids 110 (1989) 203-205 |
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| Damage related deep electronic levels in silicon irradiated with 1.6 GeV Ar ions |
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| J. KrynickiM. ToulemondeJ.C. Muller1P. Siffert1 |
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| (1989) |
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| 1 : | IReS - Institut de Recherches Subatomiques |
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| in2p3-00019456, version 1 | |
| http://hal.in2p3.fr/in2p3-00019456 | |
| oai:hal.in2p3.fr:in2p3-00019456 | |
| Contributeur : Yvette Heyd | |
| Soumis le : Mercredi 30 Mai 2001, 14:34:26 | |
| Dernière modification le : Mercredi 30 Mai 2001, 14:34:26 | |
