Damage related deep electronic levels in silicon irradiated with 1.6 GeV Ar ions

J. Krynicki; M. Toulemonde; J.C. Muller; P. Siffert

Damage related deep electronic levels in silicon irradiated with 1.6 GeV Ar ions

J. Krynicki M. Toulemonde J.C. Muller ¹ P. Siffert ¹

1 IReS - Institut de Recherches Subatomiques

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Journal articles

Radiation Effects and Defects in Solids, Taylor & Francis: STM, Behavioural Science and Public Health Titles, 1989, 110, pp.203-205

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Submitted on : Wednesday, May 30, 2001 - 2:34:26 PM
Last modification on : Wednesday, May 30, 2001 - 2:34:26 PM

Damage related deep electronic levels in silicon irradiated with 1.6 GeV Ar ions

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