Rapid thermal annealing of electrically-active defects in virgin and implanted silicon

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Journal articles
Applied Physics A: Materials Science and Processing, Springer Verlag (Germany), 1987, 42, pp.227-232


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Submitted on : Thursday, May 31, 2001 - 8:00:10 AM
Last modification on : Thursday, May 31, 2001 - 8:00:10 AM

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  • HAL Id : in2p3-00019463, version 1

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W.O. Adekoya, J.C. Muller, P. Siffert. Rapid thermal annealing of electrically-active defects in virgin and implanted silicon. Applied Physics A: Materials Science and Processing, Springer Verlag (Germany), 1987, 42, pp.227-232. <in2p3-00019463>

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