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Rapid thermal annealing of electrically-active defects in virgin and implanted silicon

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http://hal.in2p3.fr/in2p3-00019463
Contributor : Yvette Heyd Connect in order to contact the contributor
Submitted on : Thursday, May 31, 2001 - 8:10:44 AM
Last modification on : Thursday, April 23, 2020 - 2:26:20 PM

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  • HAL Id : in2p3-00019463, version 1

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W.O. Adekoya, J.C. Muller, P. Siffert. Rapid thermal annealing of electrically-active defects in virgin and implanted silicon. Applied physics. A, Materials science & processing, Springer Verlag, 1987, 42, pp.227-232. ⟨in2p3-00019463⟩

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