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The use of H$_2$ and NH$_3$ ion implantation in the passivation of defects in silicon ribbon grown by the ribbon-against-drop technique

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http://hal.in2p3.fr/in2p3-00019464
Contributor : Yvette Heyd Connect in order to contact the contributor
Submitted on : Thursday, May 31, 2001 - 8:18:59 AM
Last modification on : Thursday, April 23, 2020 - 2:26:20 PM

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  • HAL Id : in2p3-00019464, version 1

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E. Courcelle, J.C. Muller, P. Siffert, C. Belouet. The use of H$_2$ and NH$_3$ ion implantation in the passivation of defects in silicon ribbon grown by the ribbon-against-drop technique. Solar Cells, Elsevier, 1985, 14, pp.157-166. ⟨in2p3-00019464⟩

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