Direct measurement of the maximum depth phase change of crystal silicon under pulsed laser irradiation

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Journal articles
Journal of Applied Physics, American Institute of Physics (AIP), 1984, 56, pp.1878-1880


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Submitted on : Thursday, May 31, 2001 - 8:00:44 AM
Last modification on : Thursday, May 31, 2001 - 8:00:44 AM

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  • HAL Id : in2p3-00019467, version 1

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M. Toulemonde, R. Heddache, F. Nielsen, P. Siffert. Direct measurement of the maximum depth phase change of crystal silicon under pulsed laser irradiation. Journal of Applied Physics, American Institute of Physics (AIP), 1984, 56, pp.1878-1880. <in2p3-00019467>

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