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Direct measurement of the maximum depth phase change of crystal silicon under pulsed laser irradiation

M. Toulemonde 1 R. Heddache 1 F. Nielsen 1 P. Siffert 1
1 IReS - Institut de Recherches Subatomiques
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http://hal.in2p3.fr/in2p3-00019467
Contributor : Yvette Heyd <>
Submitted on : Thursday, May 31, 2001 - 8:44:33 AM
Last modification on : Wednesday, February 17, 2021 - 11:50:24 AM

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  • HAL Id : in2p3-00019467, version 1

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M. Toulemonde, R. Heddache, F. Nielsen, P. Siffert. Direct measurement of the maximum depth phase change of crystal silicon under pulsed laser irradiation. Journal of Applied Physics, American Institute of Physics, 1984, 56, pp.1878-1880. ⟨in2p3-00019467⟩

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