Direct measurement of the maximum depth phase change of crystal silicon under pulsed laser irradiation

M. Toulemonde; R. Heddache; F. Nielsen; P. Siffert

Direct measurement of the maximum depth phase change of crystal silicon under pulsed laser irradiation

M. Toulemonde ¹ R. Heddache ¹ F. Nielsen ¹ P. Siffert ¹

1 IReS - Institut de Recherches Subatomiques

Document type :

Journal articles

Journal of Applied Physics, American Institute of Physics (AIP), 1984, 56, pp.1878-1880

Domain :

Physics / Physics / Instrumentation and Detectors

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Contributor : Yvette Heyd <>
Submitted on : Thursday, May 31, 2001 - 8:44:33 AM
Last modification on : Thursday, May 31, 2001 - 8:44:33 AM

Direct measurement of the maximum depth phase change of crystal silicon under pulsed laser irradiation

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