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Pulsed laser annealing of RF sputtered amorphous Si-H films doped with arsenic

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http://hal.in2p3.fr/in2p3-00019482
Contributor : Yvette Heyd <>
Submitted on : Thursday, May 31, 2001 - 12:44:03 PM
Last modification on : Wednesday, February 17, 2021 - 11:50:41 AM

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  • HAL Id : in2p3-00019482, version 1

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E. Fogarassy, R. Stuck, M. Toulemonde, J.C. Bruyere, P. Siffert. Pulsed laser annealing of RF sputtered amorphous Si-H films doped with arsenic. Journal of Applied Physics, American Institute of Physics, 1982, 53, pp.3261-3266. ⟨in2p3-00019482⟩

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