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Raman scattering characterization of Si(100) implanted with mega-electron-volt Sb

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http://hal.in2p3.fr/in2p3-00021422
Contributor : Peggy Bardon <>
Submitted on : Friday, June 22, 2001 - 11:11:01 AM
Last modification on : Sunday, January 3, 2021 - 8:58:01 AM

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  • HAL Id : in2p3-00021422, version 1

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S. Dey, C. Roy, A. Pradhan, S. Varma. Raman scattering characterization of Si(100) implanted with mega-electron-volt Sb. Journal of Applied Physics, American Institute of Physics, 2000, 87, pp.1110-1117. ⟨in2p3-00021422⟩

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