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Composition etching and optical properties of silicon nitride films deposited by plasma-enhanced chemical vapour deposition prepared in variable Nh3-N2 gas mixture diluted with helium

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http://hal.in2p3.fr/in2p3-00022586
Contributor : Yvette Heyd Connect in order to contact the contributor
Submitted on : Thursday, May 25, 2000 - 2:49:40 PM
Last modification on : Thursday, April 23, 2020 - 2:26:21 PM

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B. Reynes, C. Ance, J.P. Stoquert, J.C. Bruyere. Composition etching and optical properties of silicon nitride films deposited by plasma-enhanced chemical vapour deposition prepared in variable Nh3-N2 gas mixture diluted with helium. Thin Solid Films, Elsevier, 1991, 203, pp.87-94. ⟨in2p3-00022586⟩

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