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Micro- and macro-structure of implantation-induced disorder in Ge

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http://hal.in2p3.fr/in2p3-00022863
Contributor : Jocelyne Lorgeril Connect in order to contact the contributor
Submitted on : Wednesday, May 3, 2000 - 3:46:25 PM
Last modification on : Wednesday, September 16, 2020 - 4:07:23 PM

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  • HAL Id : in2p3-00022863, version 1

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C.J. Glover, M.C. Ridgway, A.P. Byrne, K.M. Yu, G.J. Foran, et al.. Micro- and macro-structure of implantation-induced disorder in Ge. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2000, 161, pp.1033-1037. ⟨in2p3-00022863⟩

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