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Light-ion beam for microelectronic applications

Abstract : In this paper we describe the structure and the composition of (Al,Ga)N/GaN Bragg reflectors obtained from Rutherford backscattering spectroscopy. Bragg reflectors constitute a part of blue ($\lambda$ = 450 nm) resonant cavity light emitting diodes. To improve the measurement accuracy, three tilt angles have been used (10\degres, 25\degres and 50\degres). In a second part of the paper, ion beam induced charges study has been carried out, with a 2 MeV $^4$He$^+$ micro-beam, on metal–semiconductor–metal UV photodetectors. Results have been taken into account for the design of the photodetector electrodes.
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http://hal.in2p3.fr/in2p3-00024484
Contributor : Dominique Girod Connect in order to contact the contributor
Submitted on : Tuesday, August 23, 2005 - 2:38:18 PM
Last modification on : Wednesday, November 25, 2020 - 5:46:02 PM

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L. Hirsch, P. Tardy, G. Wantz, N. Huby, P. Moretto, et al.. Light-ion beam for microelectronic applications. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2005, 240, pp.265-270. ⟨10.1016/j.nimb.2005.06.127⟩. ⟨in2p3-00024484⟩

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