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Novel low-k dielectric obtained by Xenon implantation in SiO2

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http://hal.in2p3.fr/in2p3-00025461
Contributor : Dominique Girod <>
Submitted on : Monday, January 23, 2006 - 3:43:24 PM
Last modification on : Wednesday, September 16, 2020 - 4:17:35 PM

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  • HAL Id : in2p3-00025461, version 1

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H. Assaf, E. Ntsoenzok, M.-O. Ruault, O. Kaitasov. Novel low-k dielectric obtained by Xenon implantation in SiO2. Gettering and Defect Engineering in Semiconductor Technology XI, Sep 2005, Giens, France. pp.291-296. ⟨in2p3-00025461⟩

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