Skip to Main content Skip to Navigation
Conference papers

Mixing behaviour of buried transition metal layer in silicon due to swift heavy ion irradiation

Abstract : The changes in behaviour of mixing at the interface of Si/Me/Si (Me = V, Fe, Co) due to irradiation by swift heavy ions of Au at 120 MeV with respect to the ion dose is reported here. The fluences were varied from 1 × 1013 to 1 × 1014 ions/cm2 on the bi-layers of Si/Me/Si (Me = V, Fe, Co). The interface of Si/Me (Me = V, Fe, Co) was characterized using Rutherford backscattering spectroscopy (RBS) and secondary ion mass spectrometry (SIMS). In all the three cases, the atomic mixing width was found to be increasing monotonically with ion fluence. The mixing rate calculations were made and the diffusivity values thus obtained suggested a transient melt phase at the interface according to thermal spike model. Further work on the irradiated samples for characterizing the buried layers and formation of stable silicide phases by annealing are being carried out.
Complete list of metadatas

http://hal.in2p3.fr/in2p3-00025804
Contributor : Dominique Girod <>
Submitted on : Tuesday, March 21, 2006 - 1:41:22 PM
Last modification on : Wednesday, September 16, 2020 - 4:17:40 PM

Identifiers

Collections

Citation

B.R. Chakraborty, D. Kabiraj, K. Diva, J.C. Pivin, D.K. Avasthi. Mixing behaviour of buried transition metal layer in silicon due to swift heavy ion irradiation. Indo German Workshop on Synthesis and Modifications of Nano-Structured Materials by Energetic Ion Beams - ICGEB, Feb 2005, New Delhi, India. pp.209-212, ⟨10.1016/j.nimb.2005.11.133⟩. ⟨in2p3-00025804⟩

Share

Metrics

Record views

94