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Edgeless silicon pad detectors

Abstract : We report measurements in a high-energy pion beam of the sensitivity of the edge region in “edgeless” planar silicon pad diode detectors diced through their contact implants. A large surface current on such an edge prevents the normal reverse biasing of the device, but the current can be sufficiently reduced by the use of a suitable cutting method, followed by edge treatment, and by operating the detector at low temperature. The depth of the dead layer at the diced edge is measured to be (12.5±8stat..±6syst.) μm.
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Submitted on : Tuesday, May 23, 2006 - 7:19:13 AM
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B. Perea Solano, M.C. Abreu, V. Avati, T. Boccali, V. Boccone, et al.. Edgeless silicon pad detectors. 13th International Workshop on Vertex Detectors - VERTEX 2004, Sep 2004, Como, Italy. pp.135-138, ⟨10.1016/j.nima.2005.11.244⟩. ⟨in2p3-00071059⟩



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