Structural and nuclear characterizations of defects created by noble gas implantation in silicon oxide

Abstract : Thermally grown silicon oxide layer was implanted at room temperature with 300keV Xe at fluences ranging from 0.5 to 5x10$^16$Xe/cm$^2$. Bubbles created after Xe-implantation provided a low-k silicon oxide that has potential use as a dielectric material for interconnects in Si integrated circuits. Transmission Electron Microscopy (TEM), Rutherford Backscattering Spectrometry (RBS) and Positron Annihilation Spectroscopy (PAS) were used to provide a comprehensive characterization of defects (bubbles, vacancy, gas atoms and other types of defects) created by Xe implantation in $SiO_2$ layer. These measurements suggest that the bubbles observed with TEM for all fluences were a consequence of the interaction between Xe and vacancies (V), with $V_nXe_m$ complexes created in the zone where V and Xe profiles overlap. Negatively charged defects such as ($Si-O^-$, $Si-O-O^-$ and $O_2^-$) are also created after implantation.
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Conference papers
Enrico Napolitani, Andrej Kuznetsov, Wolfgang Skorupa and Majeed Foad. E-MRS IUMRS ICEM 2006 Spring Meeting - Symposium U: Si-based Materials for Advanced Microelectronic Devices: Synthesis, Defects and Diffusion, May 2006, Nice, France. 253, pp.222-226, <10.1016/j.nimb.2006.10.042>


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Submitted on : Friday, November 24, 2006 - 12:00:00 PM
Last modification on : Wednesday, November 29, 2006 - 1:00:13 PM

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H. Assaf, E. Ntsoenzok, M.-F. Barthe, M.-O. Ruault, T. Sauvage, et al.. Structural and nuclear characterizations of defects created by noble gas implantation in silicon oxide. Enrico Napolitani, Andrej Kuznetsov, Wolfgang Skorupa and Majeed Foad. E-MRS IUMRS ICEM 2006 Spring Meeting - Symposium U: Si-based Materials for Advanced Microelectronic Devices: Synthesis, Defects and Diffusion, May 2006, Nice, France. 253, pp.222-226, <10.1016/j.nimb.2006.10.042>. <in2p3-00115973>

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