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Structural properties of poly-Si thin films grown on ZnO:Al coated glass substrates by aluminium induced crystallisation

Abstract : The structural properties of poly-Si thin films on ZnO:Al coated glass substrates obtained by Aluminium-Induced Crystallisation (AIC) in different annealing atmospheres - air, N2, and N2 + H2, have been studied by Raman microprobe spectroscopy, optical microscopy , and X-ray diffraction . The Al, ZnO:Al and a-Si films were deposited by r.f. magnetron sputtering. Annealing in forming gas led to a better structural quality of the poly-Si films, compared to annealing in air or nitrogen. The investigation of different annealing conditions in forming gas led to the conclusion that the two-step annealing technique provided AIC poly-Si films with better crystalline properties. The results indicated that the process of AIC is suitable for the preparation of poly-Si films on ZnO:Al coated glass substrates, for solar cell applications.
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http://hal.in2p3.fr/in2p3-00136822
Contributor : Dominique Girod <>
Submitted on : Thursday, March 15, 2007 - 1:01:45 PM
Last modification on : Wednesday, September 16, 2020 - 4:17:29 PM

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  • HAL Id : in2p3-00136822, version 1

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D. Dimova-Malinovska, O. Angelov, M. Kamenova, A. Vaseashta, J.C. Pivin. Structural properties of poly-Si thin films grown on ZnO:Al coated glass substrates by aluminium induced crystallisation. 14th International School on Condensed Matter Physics, Sep 2006, Varna, Bulgaria. pp.355-358. ⟨in2p3-00136822⟩

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