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Front-end Electronics for Silicon Trackers readout in Deep Sub-Micron CMOS Technology: The case of Silicon strips at the ILC.

Abstract : For the years to come, Silicon strips detectors will be read using the smallest available integrated technologies for room, transparency, and power considerations. CMOS, Bipolar-CMOS and Silicon-Germanium are presently offered in deepsubmicron (250 down to 90nm) at affordable cost through worldwide integrated circuits multiproject centers. As an example, a 180nm CMOS readout prototype chip has been designed and tested, and gave satisfactory results in terms of noise and power. Beam tests are under work, and prospectives in 130nm will be presented.
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http://hal.in2p3.fr/in2p3-00142600
Contributor : Dominique Girod <>
Submitted on : Friday, April 20, 2007 - 8:51:58 AM
Last modification on : Wednesday, July 22, 2020 - 9:54:13 AM

Identifiers

  • HAL Id : in2p3-00142600, version 1
  • CERN : 1027473

Citation

J.F. Genat, M. Dhellot, J. David, D. Fougeron, R. Hermel, et al.. Front-end Electronics for Silicon Trackers readout in Deep Sub-Micron CMOS Technology: The case of Silicon strips at the ILC.. 12th Workshop on Electronics For LHC and Future Experiments LECC 2006, Sep 2006, Valence, Spain. pp.249-252. ⟨in2p3-00142600⟩

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