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Temperature dependence of the damage induced by Cs ion implantation in zirconia

Abstract : Single crystals of cubic zirconia were implanted at RT and 750 °C with increasing fluences of low energy Cs2+ ions. In situ RBS/C and TEM experiments were performed to determine the amount of damage, the nature of radiation defects and the possible occurrence of Cs precipitates as a function of the Cs fluence at both temperatures. Results indicate that the damage build-up and the nature of defects depend on the implantation temperature. TEM micrographs do not reveal the formation of any secondary phase for both implantation temperatures up to 3 at.%.
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Submitted on : Wednesday, September 5, 2007 - 12:58:42 PM
Last modification on : Wednesday, September 16, 2020 - 4:17:34 PM

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L. Vincent, L. Thomé, F. Garrido, O. Kaitasov. Temperature dependence of the damage induced by Cs ion implantation in zirconia. 15th International Conference on Ion Beam Modification of Materials, Sep 2006, Taormina, Italy. pp.480-483, ⟨10.1016/j.nimb.2007.01.086⟩. ⟨in2p3-00169873⟩

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