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High energy N+ ion implantation in 4H–SiC

Abstract : Box profiles were formed in 4H–SiC epilayers by different combination of multi-energy N+ ion implantations at room temperature, with energy ranges varying from [0.5–2 MeV] to [0.4–4 MeV]. The fluences were adjusted in order to keep a constant plateau concentration between 2 and 3 × 1018 cm−3. Post-implantation annealing were performed at 1650 or 1800 °C up to 45 min in ultra-pure argon atmosphere, to activate the dopants. During this process, some samples were encapsulated with a graphite (C) cap obtained by thermal conversion of a spin-coated AZ5214E photoresist. Both as-implanted and annealed samples were analyzed by Rutherford Backscattering Spectroscopy in channeling mode (RBS/C) with 3.5 MeV He+ beam to quantify the induced damage. Dopant profiles were obtained by Secondary Ion Mass Spectroscopy (SIMS) measurements and compared to Monte–Carlo (MC) simulation.
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Contributor : Dominique Girod <>
Submitted on : Friday, September 7, 2007 - 1:09:25 PM
Last modification on : Monday, November 30, 2020 - 10:00:04 AM

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Erwan Oliviero, Mihai Lazar, A. Gardon, C. Peaucelle, A. Perrat, et al.. High energy N+ ion implantation in 4H–SiC. 15th International Conference on Ion Beam Modification of Materials, Sep 2006, Taormina, Italy. pp.265-269, ⟨10.1016/j.nimb.2007.01.256⟩. ⟨in2p3-00170330⟩

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