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Cryogenic SiGe Hetero-Junction Bipolar Transistors from Standard Technologies for Low Noise FLL

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http://hal.in2p3.fr/in2p3-00196815
Contributor : Simone Lantz <>
Submitted on : Thursday, December 13, 2007 - 3:42:14 PM
Last modification on : Wednesday, October 21, 2020 - 4:32:15 PM

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  • HAL Id : in2p3-00196815, version 1

Citation

D. Prêle, G. Sou, G. Klisnick, M. Redon, E. Bréelle, et al.. Cryogenic SiGe Hetero-Junction Bipolar Transistors from Standard Technologies for Low Noise FLL. 13th IEEE International Conference on Electronics, Circuits and Systems, ICECS-2006, Dec 2006, Nice, France. pp.525-528. ⟨in2p3-00196815⟩

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