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SEGR Study on Power MOSFETs: Multiple Impacts Assumption

Abstract : This paper presents experimental data showing heavy ions inducing gate degradation in power MOSFETs. In the experiments, backside and front-side irradiations are performed. During backside irradiation, the heavy ion ranges are tuned in such way to control whether they hit the gate or not. Gate-to-source current Igss ( ) is measured versus heavy ions (H.I.) fluence . Post-irradiation- gate-stress-test (PGST) allows measurement of gate breakdown voltage VBD( ) which is observed to decrease with (H.I.) fluence. Based on these experimental results, a hypothesis of substrate- generated carriers impact overlap of multiple strikes may explain gate degradation until SEGR triggering. This last hypothesis is supported by a statistical model approach of heavy ions multiple impacts.
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Contributor : Michel Lion <>
Submitted on : Monday, November 3, 2008 - 2:49:23 PM
Last modification on : Wednesday, October 14, 2020 - 3:49:12 AM




D. Peyre, Ch. Poivey, Ch. Binois, R. Mangeret, G. Salvaterra, et al.. SEGR Study on Power MOSFETs: Multiple Impacts Assumption. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2008, 55, pp.2181-2187. ⟨10.1109/TNS.2008.2001925⟩. ⟨in2p3-00336302⟩



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