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Simulation of charge collection processes in semiconductor CdZnTe γ-ray detectors

Abstract : We present a Monte Carlo algorithm for the simulation of charge collection behavior of semiconductor γ-ray detectors. The model takes into account the electrical properties of the detectors, transport properties of the material, trapping induced by impurities, experimental setup characteristics and γ-ray–matter interaction processes. We demonstrate how to include electrostatic repulsion as a correction to diffusion coefficient for Gaussian-shaped charge distribution. Comparison of simulated and measured data for different γ-ray sources for a CdZnTe single-sided charge-sharing strip detector are shown to demonstrate the efficiency of the model even for small electrode-pitch detector simulation.
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Submitted on : Wednesday, May 27, 2009 - 4:28:25 PM
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M. Benoit, L.-A. Hamel. Simulation of charge collection processes in semiconductor CdZnTe γ-ray detectors. 5th International Conference on New Developments In Photodetection 2008 (NDIP08), Jun 2008, Aix-les-Bains, France. pp.508-516, ⟨10.1016/j.nima.2009.04.019⟩. ⟨in2p3-00388873⟩



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