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Characteristics of a prototype matrix of Silicon PhotoMultipliers (SiPM)

Abstract : This work reports on the electrical (static and dynamic) as well as on the optical characteristics of a prototype matrix of Silicon Photomultipliers (SiPM). The prototype matrix consists of 4 × 4 SiPM's on the same substrat fabricated at FBK-irst (Trento, Italy). Each SiPM of the matrix has an area of 1 × 1mm2 and it is composed of 625 microcells connected in parallel. Each microcell of the SiPM is a GM-APD (n+/p junction on P+ substrate) with an area of 40 × 40 μm2 connected in series with its integrated polysilicon quenching resistance. The static characteristics as breakdown voltage, quenching resistance, post-breakdown dark current as well as the dynamic characteristics as gain and dark count rate have been analysed. The photon detection efficiency as a function of wavelength and operation voltage has been also estimated.
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http://hal.in2p3.fr/in2p3-00391627
Contributor : Sabine Starita <>
Submitted on : Thursday, June 4, 2009 - 11:59:31 AM
Last modification on : Wednesday, September 16, 2020 - 4:23:40 PM

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N. Dinu, P. Barrillon, C. Bazin, N. Belcari, M. G. Bisogni, et al.. Characteristics of a prototype matrix of Silicon PhotoMultipliers (SiPM). Pixel 2008 International Workshop, Sep 2008, Batavia, United States. pp.P03016, ⟨10.1088/1748-0221/4/03/P03016⟩. ⟨in2p3-00391627⟩

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