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Effects of silicone coating degradation on GaN MQW LEDs performances using physical and chemical analyses

R. Baillot 1 Y. Deshayes 1 L. Bechou 1 T. Buffeteau 2 I. Pianet 2 C. Armand F. Voillot S. Sorieul 3 Y. Ousten 1
1 IMS - Laboratoire de l'intégration, du matériau au système
2 ISM - Institut des Sciences Moléculaires
3 CENBG - Centre d'Etudes Nucléaires de Bordeaux Gradignan
Abstract : This work presents a physics of failure (POF) methodology coupling failure signatures with physico-chemical analyses. The aim is to work out electro-optical failure signatures located in packaged InGaN/GaN Multiple Quantum Wells Light Emitting Diodes (MQW LEDs). Electrical and optical characteristics performed after accelerated ageing tests (30 mA/85 °C/1500 h), confirm a 65% drop of optical power and an increase of one decade of leakage current spreading at the silicone oil/chip interfaces. Through measurements of silicone coating fluorescence emission spectra, we demonstrate that the polymer enlarges the LED emission spectrum and shifts central wavelength. This shift is related to silicone oil spectral instability and the central wavelength of packaged LED appears to be temperature insensitive. In this paper, we discriminate the degradation of bulk silicone oil responsible for optical losses from the polymer/chip interface inducing larger leakage current.
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http://hal.in2p3.fr/in2p3-00532869
Contributor : Virginie Mas <>
Submitted on : Friday, November 5, 2010 - 10:30:31 AM
Last modification on : Thursday, January 11, 2018 - 6:21:16 AM

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IN2P3 | CENBG | CNRS | IMS-BORDEAUX | UNIV-BORDEAUX | INC-CNRS | IMS-BORDEAUX-FUSION

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R. Baillot, Y. Deshayes, L. Bechou, T. Buffeteau, I. Pianet, et al.. Effects of silicone coating degradation on GaN MQW LEDs performances using physical and chemical analyses. ESREF 2010 - 21st European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, Oct 2010, Gaeta, Italy. pp.1568-1573, ⟨10.1016/j.microrel.2010.07.056⟩. ⟨in2p3-00532869⟩

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