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Poster communications

Temperature and Bias Voltage Dependence of the MPPC Detectors

Abstract : This work reports on the characterization of the Multi-Pixel Photon Counter (MPPC) detectors as a function of the temperature and bias voltage. Devices of 1x1 mm2 and 3x3 mm2 total area and 50x50 µm2 µcell size produced by Hamamatsu Photonics have been studied. The temperature has been varied from -110°C to -50°C using a cryostat cooled by liquid nitrogen and from 0 to 38°C using a climatic chamber. Important electrical parameters of the MPPC detectors as gain, breakdown voltage, quenching resistance, capacitance and dark count rate have been measuredsubstrate (on the rear side) and by a metal layer (on the front side). Each µcell is represented by a p+/n junction working in Geiger-mode connected in series with its integrated passive quenching resistance. The detectors are operated with each µcell biased to a bias voltage Vbias above the breakdown voltage VBD. The Vbias exceeds the VBD by an amount called overvoltage ΔV = Vbias – VBD, which has a critical influence on detector performance.
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http://hal.in2p3.fr/in2p3-00537108
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Submitted on : Wednesday, November 17, 2010 - 4:13:33 PM
Last modification on : Wednesday, September 16, 2020 - 4:21:36 PM
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N. Dinu, C. Bazin, C. Chaumat, C. Cheikali, A. Para, et al.. Temperature and Bias Voltage Dependence of the MPPC Detectors. 2010 IEEE Nuclear Science Symposium, Medical Imaging Conference and 17th Room Temperature Semiconductor Detector Worksho, Oct 2010, Knoxville, United States. IEEE, pp.215-219, 2010, ⟨10.1109/NSSMIC.2010.5873750⟩. ⟨in2p3-00537108⟩

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