Skip to Main content Skip to Navigation
Conference papers

Simulation of Charge Multiplication and Trap-Assisted Tunneling in Irradiated Planar Pixel Sensors

Abstract : We present a model for the TCAD simulation of charge multiplication and trap-to-band tuneling to explain the discrepancies between the experimentally observed charge collection in highly irradiated planar pixel sensors and the predictions made using known models. DC and transient TCAD simulations of one dimensional n-in-p diodes were performed and reproduce well the observed behavior of diode irradiated at fluences of the order of 1e15 to 1e16 neq/cm^2. The model offers a first physical model for the anomalous charge amplification observed in heavily irradiated sensors that could be use for further design of such detector for higher radiation hardness. The results of the simulations show that impact ionization and detrapping due to tunelling qualitatively explain the behavior of irradiated sensors observed experimentally.
Complete list of metadata

http://hal.in2p3.fr/in2p3-00577158
Contributor : Sabine Starita <>
Submitted on : Wednesday, March 16, 2011 - 3:30:46 PM
Last modification on : Wednesday, September 16, 2020 - 4:24:43 PM

Identifiers

Collections

IN2P3 | LAL | CNRS

Citation

M. Benoit, A. Lounis, N. Dinu. Simulation of Charge Multiplication and Trap-Assisted Tunneling in Irradiated Planar Pixel Sensors. 2010 IEEE Nuclear Science Symposium, Medical Imaging Conference and 17th Room Temperature Semiconductor Detector Workshop, Oct 2010, Knoxville, United States. pp.612-616, ⟨10.1109/NSSMIC.2010.5873832⟩. ⟨in2p3-00577158⟩

Share

Metrics

Record views

100