Epitaxial growth of GdN on silicon substrate using an AlN buffer layer

F. Natali; N. Plank; J. Galipaud; B.J. Ruck; H. J. Trodahl; F. Semond; S. Sorieul; L. Hirsch

doi:10.1016/j.jcrysgro.2010.09.030

Journal articles

Epitaxial growth of GdN on silicon substrate using an AlN buffer layer

F. Natali N. Plank J. Galipaud B.J. Ruck H. J. Trodahl F. Semond ¹ S. Sorieul ² L. Hirsch

1 CRHEA - Centre de recherche sur l'hétéroepitaxie et ses applications

2 CENBG - Centre d'Etudes Nucléaires de Bordeaux Gradignan

Document type :

Journal articles

Domain :

Physics [physics] / Physics [physics] / Instrumentation and Detectors [physics.ins-det]

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Submitted on : Monday, April 11, 2011 - 10:52:33 PM
Last modification on : Monday, October 12, 2020 - 10:27:32 AM

Epitaxial growth of GdN on silicon substrate using an AlN buffer layer

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Epitaxial growth of GdN on silicon substrate using an AlN buffer layer

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