Skip to Main content Skip to Navigation
Journal articles

Improved limits on β+EC and ECEC processes in Sn112

Abstract : Limits on β+EC and ECEC processes in Sn112 have been obtained using a 380 cm3 HPGe detector and an external source consisting of 100 g enriched tin (94.32% of Sn112). A limit with 90% C.L. on the Sn112 half-life of 1.3×1021 yr for the ECEC(0ν) transition to the 03+ excited state in Cd112 (1871 keV) has been established. This transition has been discussed in the context of a possible enhancement of the decay rate. The limits on other β+EC and ECEC processes in Sn112 have also been obtained on the level of (0.1-1.6)×1021 yr at the 90% C.L.
Document type :
Journal articles
Complete list of metadata

http://hal.in2p3.fr/in2p3-00605516
Contributor : Virginie Mas <>
Submitted on : Friday, July 1, 2011 - 10:30:19 PM
Last modification on : Saturday, May 29, 2021 - 12:50:03 PM

Identifiers

Collections

Citation

A.S. Barabash, P. Hubert, Catherine Marquet, A. Nachab, S. I. Konovalov, et al.. Improved limits on β+EC and ECEC processes in Sn112. Physical Review C, American Physical Society, 2011, 83, pp.045503. ⟨10.1103/PhysRevC.83.045503⟩. ⟨in2p3-00605516⟩

Share

Metrics

Record views

145