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Defect studies in ion irradiated AlGaN

Abstract : Defects created in Al0.4Ga0.6N crystals by 320 keV Ar ion irradiation were studied using Rutherford Backscattering Spectroscopy/Channeling (RBS/C) and Transmission Electron Microscopy (TEM) techniques. One of the main aims of the work was to use a revised version of McChasy, a Monte-Carlo simulation code of backscattering spectra, for the analysis of experimental results obtained for a dislocation-containing crystal. TEM was used to get a better insight into dislocation and dislocation loop geometries in order to restrict the range of parameters used in simulations. RBS/C analysis was performed in a 1.5-3 MeV energy range to check if MC simulations correctly reproduce backscattering spectra at different energies. 2010 Elsevier B.V. All rights reserved.
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Submitted on : Thursday, July 21, 2011 - 11:45:07 AM
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J. Jagielski, L. Thomé, Y. Zhang, C.M. Wang, A. Turos, et al.. Defect studies in ion irradiated AlGaN. 19th International Conference on Ion Beam Analysis, Sep 2009, Cambridge, United Kingdom. pp.2056-2059, ⟨10.1016/j.nimb.2010.02.055⟩. ⟨in2p3-00610175⟩

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