Skip to Main content Skip to Navigation
Conference papers

Fe-implanted SiC as a potential DMS: X-ray diffraction and rutherford backscattering and channelling study

Abstract : Single crystalline (0 0 0 1)-oriented 6H-SiC samples were implanted at 380 degrees C with low-energy Fe ions (in the 100 keV range) with the aim of synthesizing so-called diluted magnetic semiconductors. X-ray diffraction and Rutherford backscattering spectrometry and channeling are used to study the microstructural changes in these Fe-implanted SiC crystals submitted to furnace annealing and laser processing, both treatments being performed in order to eliminate the implantation-induced defects. (C) 2010 Elsevier B.V. All rights reserved.
Complete list of metadata

http://hal.in2p3.fr/in2p3-00610381
Contributor : Christine Hadrossek <>
Submitted on : Thursday, July 21, 2011 - 5:22:27 PM
Last modification on : Tuesday, October 20, 2020 - 10:17:16 AM

Identifiers

Collections

Citation

C. Dupeyrat, A. Declemy, M. Drouet, A. Debelle, L. Thome. Fe-implanted SiC as a potential DMS: X-ray diffraction and rutherford backscattering and channelling study. 15th International Conference of the Radiation Effects in Insulators, Aug 2009, padou, Italy. pp.2863-2865, ⟨10.1016/j.nimb.2010.03.018⟩. ⟨in2p3-00610381⟩

Share

Metrics

Record views

123