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He implantation in cubic zirconia: Deleterious effect of thermal annealing

Abstract : This study investigates the microstructural modifications induced in cubic zirconia by He implantation at high concentration (similar to 4 at.%). The effect of post-implantation thermal annealing on the crystal stability is particularly addressed. For this purpose, three complementary analysis techniques, namely RBS/C, XRD and TEM, have been used. The structure of as-implanted crystals appears weakly defective, the damage very likely consisting of interstitial-type defects and helium-vacancy clusters. These defects induce a tensile elastic strain gradient with a depth distribution that overlaps the He depth profile. After annealing at 800 degrees C, a partial strain relaxation is observed, but the crystalline structure is strongly altered due to the formation of helium bubbles and elongated fractures. (C) 2010 Elsevier B.V. All rights reserved.
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Submitted on : Friday, July 22, 2011 - 4:40:38 PM
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G. Velisa, A. Debelle, L. Vincent, L. Thome, A. Declemy, et al.. He implantation in cubic zirconia: Deleterious effect of thermal annealing. Journal of Nuclear Materials, Elsevier, 2010, 402, pp.87-92. ⟨10.1016/j.jnucmat.2010.05.001⟩. ⟨in2p3-00610611⟩

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