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Influence of ion energy on damage induced by Au-ion implantation in silicon carbide single crystals

A. Gentils 1 F. Linez 2 A. Canizares 2 P. Simon 2 L. Thome 3 M.F. Barthe 2
1 CSNSM PS2
CSNSM - Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse, CSNSM - Centre de Sciences Nucléaires et de Sciences de la Matière
3 CSNSM PCI
CSNSM - Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse
Abstract : This article reports on the influence of the ion energy on the damage induced by Au-ion implantation in silicon carbide single crystals. 6H-SiC samples were implanted with Au ions at room temperature at two different energies: 4 and 20 MeV. Both Rutherford Back-scattering spectrometry in channelling geometry (RBS/C) and Raman spectroscopy were used to probe the ion implantation-induced damage. Results show that the accumulated damage increases with the fluence up to the amorphization state. RBS/C data indicate that 4-MeV implantation induces more damage than 20-MeV implantation at a given fluence. This effect is attributed to nuclear collisions since the amount of damage is identical at 4 or 20 MeV when the fluence is rescaled in dpa. Surprisingly, Raman data detect more damage for 20-MeV implantation than for 4-MeV implantation at low fluence (below 10(13) cm(-2)) where point defects are likely formed.
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http://hal.in2p3.fr/in2p3-00621124
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Submitted on : Friday, September 9, 2011 - 2:35:30 PM
Last modification on : Friday, February 5, 2021 - 3:14:09 PM

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A. Gentils, F. Linez, A. Canizares, P. Simon, L. Thome, et al.. Influence of ion energy on damage induced by Au-ion implantation in silicon carbide single crystals. Journal of Materials Science, Springer Verlag, 2011, 46, pp.6390-6395. ⟨10.1007/s10853-011-5587-4⟩. ⟨in2p3-00621124⟩

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