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Journal articles
Influence of ion energy on damage induced by Au-ion implantation in silicon carbide single crystals
Abstract : This article reports on the influence of the ion energy on the damage induced by Au-ion implantation in silicon carbide single crystals. 6H-SiC samples were implanted with Au ions at room temperature at two different energies: 4 and 20 MeV. Both Rutherford Back-scattering spectrometry in channelling geometry (RBS/C) and Raman spectroscopy were used to probe the ion implantation-induced damage. Results show that the accumulated damage increases with the fluence up to the amorphization state. RBS/C data indicate that 4-MeV implantation induces more damage than 20-MeV implantation at a given fluence. This effect is attributed to nuclear collisions since the amount of damage is identical at 4 or 20 MeV when the fluence is rescaled in dpa. Surprisingly, Raman data detect more damage for 20-MeV implantation than for 4-MeV implantation at low fluence (below 10(13) cm(-2)) where point defects are likely formed.
http://hal.in2p3.fr/in2p3-00621124
Contributor : Christine Hadrossek Connect in order to contact the contributor
Submitted on : Friday, September 9, 2011 - 2:35:30 PM
Last modification on : Wednesday, January 5, 2022 - 10:10:03 AM
Contributor : Christine Hadrossek Connect in order to contact the contributor
Submitted on : Friday, September 9, 2011 - 2:35:30 PM
Last modification on : Wednesday, January 5, 2022 - 10:10:03 AM
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