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Irradiation damage in Gd(2)Ti(2)O(7) single crystals: Ballistic versus ionization processes

Abstract : The structural transformations induced in Gd(2)Ti(2)O(7) single crystals irradiated at high energies (870-MeV Xe), where ionization processes (electronic stopping) dominate, and at low energies (4-MeV Au), where ballistic processes (nuclear stopping) dominate, have been studied via the combination of Rutherford backscattering spectrometry and channeling (RBS/C), Raman spectroscopy, and transmission electron microscopy (TEM) experiments. At high energy, amorphization occurs directly in individual ion tracks from the extreme electronic-energy deposition, and full amorphization results from the overlapping of these tracks as described by a direct impact model. The track diameters lie in the range 6-9 nm. At low energy, amorphization occurs via indirect processes, driven by ballistic nuclear energy deposition from the ions, that is accounted for in the framework of both direct-impact/defect-stimulated and multi-step damage accumulation models. The ion fluence for total amorphization of the irradiated layer is much higher at low energy (0.5 ion nm(-2)) than at high energy (0.05 ion nm(-2)), consistent with the nuclear stopping at low energy (5.2 keV/nm) compared to the electronic stopping at high energy (29 keV/nm)
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Submitted on : Wednesday, September 14, 2011 - 5:02:45 PM
Last modification on : Saturday, September 19, 2020 - 3:04:30 AM



S. Moll, G. Sattonnay, L. Thome, J. Jagielski, C. Decorse, et al.. Irradiation damage in Gd(2)Ti(2)O(7) single crystals: Ballistic versus ionization processes. Physical Review B: Condensed Matter and Materials Physics, American Physical Society, 2011, 84, pp.064115. ⟨10.1103/PhysRevB.84.064115⟩. ⟨in2p3-00623651⟩



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