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Investigation of irradiation effects induced by self-ion in 6H-SiC combining RBS/C, Raman and XRD

Abstract : Single crystals of 6H-SiC were irradiated at room temperature and 670 K with 4 MeV C ions at two fluences: 1015 and 1016 cm-2 (0.16 and 1.6 dpa at the damage peak). Damage accumulation was studied by a combination of X-ray diffraction (XRD), Raman spectroscopy and Rutherford backscattering spectrometry in channelling geometry (RBS/C) along the [0001] direction. The irradiated layer is found to be composed of a low damage region up to ∼1.5 μm followed by a region where the disorder level is higher, consistent with SRIM predictions. At room temperature and low fluence, typically 1015 cm-2, the strain depth profile follows the dpa depth distribution (with a maximum value of ∼2%). The disorder is most likely due to small defect clusters. When increasing the fluence up to 1016 cm-2, a buried amorphous layer forms, as indicated by e.g. Raman results where the Si-C bands become broader or even disappear. At a higher irradiation temperature of 670 K, amorphization is not observed at the same fluence, revealing a dynamic annealing process. However, results tend to suggest that the irradiated layer is highly heterogeneous and composed of different types of defects.
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Submitted on : Wednesday, November 30, 2011 - 10:09:18 AM
Last modification on : Wednesday, October 14, 2020 - 3:59:34 AM

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N. Chaâbane, A. Debelle, G. Sattonnay, P. Trocellier, Y. Serruys, et al.. Investigation of irradiation effects induced by self-ion in 6H-SiC combining RBS/C, Raman and XRD. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2012, 286, pp.108-113. ⟨10.1016/j.nimb.2011.11.018⟩. ⟨in2p3-00646506⟩

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