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Swift heavy ion tracks-induced recrystallization of damaged 6H-SiC and 3C-SiC

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http://hal.in2p3.fr/in2p3-00652375
Contributor : Christine Hadrossek <>
Submitted on : Thursday, December 15, 2011 - 2:22:09 PM
Last modification on : Wednesday, September 16, 2020 - 4:17:33 PM

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  • HAL Id : in2p3-00652375, version 1

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A. Debelle. Swift heavy ion tracks-induced recrystallization of damaged 6H-SiC and 3C-SiC. 16th Radiation Effects in Insulators Conference (REI-16), Aug 2011, Pekin, China. ⟨in2p3-00652375⟩

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