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Journal articles
Xe-implanted zirconium oxycarbide studied by variable energy positron beam
Abstract : The effect of annealing on defects and the formation of Xe bubbles were investigated in zirconium oxycarbide implanted with 800-keV136Xe2+ ions at two fluences 1 × 1015 and 1 × 1016 Xe/cm2. Doppler broadening technique combined with slow positron beam was used. The analysis of the S depth profiles and S-W maps revealed that in the as-implanted samples at both fluences Xe bubbles are not formed. The post-implantation annealing of the samples implanted at 1 × 1016 Xe/cm2 caused formation of Xe bubbles. The response of the lower implantation dose samples to this post implantation annealing was found rather complicated and is discussed.
http://hal.in2p3.fr/in2p3-00661732
Contributor : Dominique Girod <>
Submitted on : Friday, January 20, 2012 - 3:00:53 PM
Last modification on : Tuesday, April 28, 2020 - 11:28:11 AM
Contributor : Dominique Girod <>
Submitted on : Friday, January 20, 2012 - 3:00:53 PM
Last modification on : Tuesday, April 28, 2020 - 11:28:11 AM