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Xe-implanted zirconium oxycarbide studied by variable energy positron beam

Abstract : The effect of annealing on defects and the formation of Xe bubbles were investigated in zirconium oxycarbide implanted with 800-keV136Xe2+ ions at two fluences 1 × 1015 and 1 × 1016 Xe/cm2. Doppler broadening technique combined with slow positron beam was used. The analysis of the S depth profiles and S-W maps revealed that in the as-implanted samples at both fluences Xe bubbles are not formed. The post-implantation annealing of the samples implanted at 1 × 1016 Xe/cm2 caused formation of Xe bubbles. The response of the lower implantation dose samples to this post implantation annealing was found rather complicated and is discussed.
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Contributor : Dominique Girod Connect in order to contact the contributor
Submitted on : Friday, January 20, 2012 - 3:00:53 PM
Last modification on : Friday, September 10, 2021 - 1:50:11 PM




N. Djourelov, G. Gutierrez, H. Marinov, E. Popov, N. Toulhoat, et al.. Xe-implanted zirconium oxycarbide studied by variable energy positron beam. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2011, 269, pp.2709-2714. ⟨10.1016/j.nimb.2011.08.022⟩. ⟨in2p3-00661732⟩



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