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Vacancy defect and carrier distributions in the high mobility electron gas formed at ion-irradiated SrTiO(3) surfaces

Abstract : Using a combination of advanced characterization tools (positron annihilation spectroscopy, conductive-tip atomic force microscopy, and high-field magnetotransport), we have studied the extension, origin and properties of the high mobility electron gas (HMEG) generated by etching the SrTiO(3) surfaces with Ar(+) ions. Contrary to previous assumptions, we show that this HMEG is not confined to nanometric thickness but extends to a few micrometer from the surface. We discuss this unanticipated large spatial extension in terms of the striking large diffusion of oxygen vacancy-related defects. (C) 2010 American Institute of Physics.
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http://hal.in2p3.fr/in2p3-00670129
Contributor : Christine Hadrossek <>
Submitted on : Tuesday, February 14, 2012 - 3:58:25 PM
Last modification on : Monday, November 16, 2020 - 11:10:04 AM

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G. Herranz, O. Copie, A. Gentils, E. Tafra, M. Basletic, et al.. Vacancy defect and carrier distributions in the high mobility electron gas formed at ion-irradiated SrTiO(3) surfaces. Journal of Applied Physics, American Institute of Physics, 2010, 107, pp.103704. ⟨10.1063/1.3369438⟩. ⟨in2p3-00670129⟩

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